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Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1800 R 12 KL4C
Hochstzulassige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prufspannung insulation test voltage tP = 1 ms T C = 80 C T C = 25 C tP = 1 ms, T C = 80C VCES IC,nom. IC ICRM 1200 1800 2850 3600 V A A A
T C=25C, Transistor
Ptot
11,4
kW
VGES
+/- 20V
V
IF
1800
A
IFRM
3600
A
VR = 0V, tp = 10ms, T Vj = 125C
I2t
590
kA2s
RMS, f = 50 Hz, t = 1 min.
VISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 1800A, VGE = 15V, Tvj = 25C IC = 1800A, VGE = 15V, Tvj = 125C IC = 72mA, VCE = VGE, T vj = 25C VGE(th) VCE sat
min.
4,5
typ.
2,1 2,4 5,5
max.
2,6 2,9 6,5 V V V
VGE = -15V...+15V
QG
-
19,5
-
C
f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V
Cies
-
135
-
nF
f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V VCE = 1200V, VGE = 0V, Tvj = 25C VCE = 1200V, VGE = 0V, Tvj = 125C VCE = 0V, VGE = 20V, Tvj = 25C
Cres ICES
-
9 0,05 4 -
2 600
nF mA mA nA
IGES
-
prepared by: Mark Munzer approved by: M. Hierholzer
date of publication: 02.09.1999 revision: 2
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Seriendatenblatt_FZ1800R12KL4C
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1800 R 12 KL4C
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 1800A, VCE = 600V VGE = 15V, RG = 0,51, T vj = 25C VGE = 15V, RG = 0,51, T vj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 1800A, VCE = 600V VGE = 15V, RG = 0,51, T vj = 25C VGE = 15V, RG = 0,51, T vj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 1800A, VCE = 600V VGE = 15V, RG = 0,51, T vj = 25C VGE = 15V, RG = 0,51, T vj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 1800A, VCE = 600V VGE = 15V, RG = 0,51, T vj = 25C VGE = 15V, RG = 0,51, T vj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip T C=25C IC = 1800A, VCE = 600V, VGE = 15V RG = 0,51, T vj = 125C, LS = 70nH IC = 1800A, VCE = 600V, VGE = 15V RG = 0,51, T vj = 125C, LS = 70nH tP 10sec, VGE 15V, RG = 0,51 T Vj125C, VCC=900V, VCEmax=VCES -LsCE *dI/dt ISC LsCE 14000 12 A nH Eoff 295 mWs Eon 230 mWs tf 0,16 0,17 s s td,off 1,09 1,18 s s tr 0,19 0,2 s s td,on 0,59 0,61 s s
min.
typ.
max.
RCC`+EE`
-
0,07
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 1800A, VGE = 0V, Tvj = 25C IF = 1800A, VGE = 0V, Tvj = 125C IF = 1800A, - diF/dt = 9900A/sec VR = 600V, VGE = -15V, Tvj = 25C VR = 600V, VGE = -15V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 1800A, - diF/dt = 9900A/sec VR = 600V, VGE = -15V, Tvj = 25C VR = 600V, VGE = -15V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 1800A, - diF/dt = 9900A/sec VR = 600V, VGE = -15V, Tvj = 25C VR = 600V, VGE = -15V, Tvj = 125C Erec 70 130 mWs mWs Qr 170 380 As As IRM 990 1290 A A VF
min.
-
typ.
1,8 1,7
max.
2,3 2,2 V V
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Seriendatenblatt_FZ1800R12KL4C
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1800 R 12 KL4C
Thermische Eigenschaften / Thermal properties
min.
Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module Paste = 1 W/m * K / grease = 1 W/m * K RthCK RthJC -
typ.
0,006
max.
0,0110 0,0240 K/W K/W K/W
T vj
-
-
150
C
T op
-40
-
125
C
T stg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight terminals M4 terminals M8 G M1 4,25 Al2O3
32
mm
20
mm
> 400 5 5,75 Nm
M2
1,7 8
2
2,3 10
Nm Nm g
2250
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
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Seriendatenblatt_FZ1800R12KL4C
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1800 R 12 KL4C
Ausgangskennlinie (typisch) Output characteristic (typical) I = f (VCE) C
VGE = 15V
3600
3000
Tj = 25C Tj = 125C
2400
IC [A]
1800
1200
600
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
VCE [V]
Ausgangskennlinienfeld (typisch) Output characteristic (typical)
3600
VGE = 17V
I = f (VCE) C
Tvj = 125C
3000
VGE = 15V VGE = 13V VGE = 11V VGE = 9V VGE = 7V
2400
IC [A]
1800
1200
600
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5
VCE [V]
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Seriendatenblatt_FZ1800R12KL4C
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1800 R 12 KL4C
Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE)
VCE = 20V
3600
3000
Tj = 25C Tj = 125C
2400
IC [A]
1800
1200
600
0 5 6 7 8 9 10 11 12
VGE [V]
Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical)
3600
I = f (VF) F
3000
Tj = 25C Tj = 125C
2400
IF [A]
1800
1200
600
0 0,0 0,5 1,0 1,5 2,0 2,5 3,0
VF [V]
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Seriendatenblatt_FZ1800R12KL4C
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1800 R 12 KL4C
Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) Rgon = Rgoff =0,51 , VCE = 600V, Tj = 125C
800 700 600 500 400 300 200 100 0 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 3300 3600
Eoff Eon Erec
E [mJ]
IC [A]
Schaltverluste (typisch) Switching losses (typical)
1200
Eoff
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
IC = 1800A , VCE = 600V , Tj = 125C
1000
Eon Erec
800 E [mJ]
600
400
200
0 0 2 4 6 8 10
RG []
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Seriendatenblatt_FZ1800R12KL4C
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1800 R 12 KL4C
Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t)
0,1
ZthJC [K / W]
0,01
0,001 0,001
Zth:Diode Zth:IGBT 0,01 0,1 1 10 100
t [sec] i ri [K/kW] =[]== : IGBT ri [K/kW] : Diode =[]== : Diode
: IGBT 1 5,00 0,0044 10,18 0,00341 2 4,43 0,0381 5,64 0,0245 3 0,76 0,195 6,44 0,047 4 0,81 0,50 1,74 0,50
Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA)
4200 3600 3000
VGE= +15V, Rg = 0,51 , Tvj= 125C
IC [A]
2400 1800 1200 600 0 0
IC,Modul IC,Chip
200
400
600
800
1000
1200
1400
VCE [V]
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Seriendatenblatt_FZ1800R12KL4C
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1800 R 12 KL4C
8(8)
Seriendatenblatt_FZ1800R12KL4C

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